发明名称 半導体接合素子の製造方法
摘要 <p>In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal.</p>
申请公布号 JP5651184(B2) 申请公布日期 2015.01.07
申请号 JP20120534982 申请日期 2011.09.02
申请人 发明人
分类号 H01L29/861;H01L29/24;H01L29/868;H01L31/0256;H01L31/072;H01L31/18;H01L35/22;H01L35/34 主分类号 H01L29/861
代理机构 代理人
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