| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a pattern that uses etching selection ratio between a polysilicon material and an oxidant. <P>SOLUTION: A hard mask layer, a first oxide film pattern, and then a nitride film pattern are formed on an etched layer of a semiconductor substrate 100. The hard mask layer is selectively exposed. A first polysilicon layer of a first thickness is formed on exposed portions of the hard mask layer, the first oxide film, and the nitride film pattern. A second oxide film of a second thickness is formed on the first polysilicon surface. A second polysilicon layer of a third thickness is formed on the second oxide layer. The second polysilicon layer, the second oxide film, and the first polysilicon layer are flattened until exposure of the nitride film pattern. The nitride film pattern is removed, exposing the first oxide film pattern. The first oxide film pattern and the second oxide film are etched in adherence to an etching selection ratio between oxide and polysilicon. The hard mask layer is etched with the first polysilicon layer and the second polysilicon layer serving as an etching mask, thereby forming a hard mask pattern. The etched layer is etched with the hard mask layer serving as a mask, thereby forming a fine pattern 110a. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
