发明名称 |
A Method of fabricating tunnel transistors with abrupt junctions |
摘要 |
A method of manufacturing a tunnel field effect transistor (TFET) includes forming on a substrate (200) covered by an epitaxially grown source material (220) a dummy gate stack (310) surrounded by sidewall spacers (320); forming doped source (530) and drain (520) regions followed by forming an inter-layer dielectric (510) surrounding the sidewall spacers; removing the dummy gate stack (310), etching a self-aligned cavity (710); epitaxially growing a thin channel region within the self-aligned etch cavity; conformally depositing gate dielectric and metal gate materials within the self-aligned etch cavity; and planarizing the top surface of the replacement metal gate stack to remove the residues of the gate dielectric and metal gate materials. |
申请公布号 |
GB2515930(A) |
申请公布日期 |
2015.01.07 |
申请号 |
GB20140016918 |
申请日期 |
2013.03.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
REINALDO VEGA;EMRE ALPTEKIN;HUNG H TRAN;XIAOBIN YUAN |
分类号 |
H01L21/336;H01L21/28;H01L29/66;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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