SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has low loss even in high-speed operation.

SOLUTION: The semiconductor device has an MOS gate structure comprising an N-drift layer 1, a field stop layer 3, a P collector layer 4, a collector electrode 9, a P base layer 2, an N+emitter region 8, a gate insulating film 6, and a gate electrode 7, and an emitter electrode 5. A Frenkel defect of higher than heat balancing density is introduced in the N-drift layer 1 and the sum of the lifetime of electrons and the lifetime of holes in the N-drift layer 1 is 0.1 to 60 μs. Further, the sum of the depth-directional thickness of the N-drift layer 1 and the depth-directional thickness of the field stop layer 3 is smaller than the diffusion length of electrons and holes when the Frenkel defect density of the N-drift layer 1 is the heat balancing density.

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