| 摘要 |
<p>The present invention describes a process for the deposition of one or more layers of zeolites on rigid supports of various natures and geometry, particularly on silicon wafers. The coating containing zeolites is characterised by pore sizes ranging from 1 Angstrom to a few nanometer units. The deposition process does not interfere with and/or alter the correct functioning of the electronic devices (diodes, bipolar junction transistors, field effect transistors and electronic amplifiers in general) already integrated on the support to be coated on which said deposition is effected. The process according to the invention can be applied to electronic devices and permits their unaltered correct functioning.</p> |
