| 发明名称 |
Photoresist underlayer film-forming composition and pattern forming process |
| 摘要 |
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO 2 substrates. |
| 申请公布号 |
EP2813891(A3) |
申请公布日期 |
2015.01.07 |
| 申请号 |
EP20140171748 |
申请日期 |
2014.06.10 |
| 申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA, JUN;KORI, DAISUKE;OGIHARA, TSUTOMU |
| 分类号 |
G03F7/09;G03F7/075;G03F7/42 |
主分类号 |
G03F7/09 |
| 代理机构 |
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