A NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A non-volatile memory device and a manufacturing method thereof are provided to increase the operating current by enlarging the area of the channel region of transistor. A non-volatile memory device comprises an active area(100B), a bottom insulating layer(108A), a charge storage layer(109A), an upper insulating layer(110A) and a gate electrode(111B). The active area is formed into the fin structure. The active area is defined by an element isolation film(102C). The element isolation film is formed under the concave part of the fin structure. The bottom insulating layer is formed to cover the active area. The charge storage layer is formed on the bottom insulating layer. The upper insulating layer is formed on the charge storage layer. The gate electrode is formed on the upper insulating layer.