| 摘要 |
<p>Silicon containing films may be deposited on a surface of a substrate using a precursor according to formula I:
wherein R 1 is independently selected from hydrogen, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 2 to C 20 alkynyl group, a C 1 to C 20 alkoxy group, a C 2 to C 20 dialkylamino group and an electron withdrawing group, and n is a number selected from 0, 1, 2, 3, 4, and 5; and R 2 is independently selected from hydrogen, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 2 to C 20 alkynyl group, a C 1 to C 20 alkoxy group, a C 20 to C 20 dialkylamino group, a C 5 to C 12 aryl group, a C 1 to C 20 fluorinated alkyl group, and a C 3 to C 12 cyclic alkyl group; optionally, when n is 1, 2, 3, 4 or 5, R 1 and R 2 together form a ring.</p> |
