发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
In an SOP1 having a semiconductor chip (11) and another semiconductor chip(21), in wire (6,7) coupling between the chips (11, 21), a withstand voltage can be secured by setting an inter-wire distance between a wire in a first wire group (6) that is closest to a second wire group (7) and a wire in the second wire group that is closest to the first wire group to be larger than an inter-wire distance between any wires in the first wire group (6) and the second wire group (7), which makes it possible to attain improvement of reliability of the SOP1. |
申请公布号 |
EP2822031(A2) |
申请公布日期 |
2015.01.07 |
申请号 |
EP20140170909 |
申请日期 |
2014.06.03 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
YAMASHITA, TAKANORI;KIYOHARA, TOSHINORI |
分类号 |
H01L23/49;H01F19/04;H01L23/495;H04L25/02 |
主分类号 |
H01L23/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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