发明名称 Semiconductor device and method for manufacturing the same
摘要 In an SOP1 having a semiconductor chip (11) and another semiconductor chip(21), in wire (6,7) coupling between the chips (11, 21), a withstand voltage can be secured by setting an inter-wire distance between a wire in a first wire group (6) that is closest to a second wire group (7) and a wire in the second wire group that is closest to the first wire group to be larger than an inter-wire distance between any wires in the first wire group (6) and the second wire group (7), which makes it possible to attain improvement of reliability of the SOP1.
申请公布号 EP2822031(A2) 申请公布日期 2015.01.07
申请号 EP20140170909 申请日期 2014.06.03
申请人 RENESAS ELECTRONICS CORPORATION 发明人 YAMASHITA, TAKANORI;KIYOHARA, TOSHINORI
分类号 H01L23/49;H01F19/04;H01L23/495;H04L25/02 主分类号 H01L23/49
代理机构 代理人
主权项
地址