| 摘要 |
<p>The present invention relates to an epitaxial wafer. The epitaxial wafer includes an epitaxial structure which includes a substrate, a buffer layer which is formed on the substrate, and an active layer which is formed on the buffer layer. The active layer is formed on the buffer layer and includes a first section in which a doping concentration is gradually reduced far away from the buffer layer and a second section which is formed on the first section and maintains a preset doping concentration.</p> |
