发明名称 |
TITANIUM TARGET FOR SPUTTERING |
摘要 |
A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics. |
申请公布号 |
EP2738285(A4) |
申请公布日期 |
2015.01.07 |
申请号 |
EP20120865255 |
申请日期 |
2012.04.27 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
TSUKAMOTO SHIRO;MAKINO NOBUHITO;FUKUSHIMA ATSUSHI;YAGI KAZUTO;HINO EIJI |
分类号 |
C23C14/34;C22B34/12;C22C14/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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