发明名称 Nonvolatile memory, memory controller, nonvolatile memory accessing method, and program
摘要 <p>Disclosed herein is a nonvolatile memory including: a nonvolatile memory cell array accessible in units of a word and further accessible at least with a fixed latency in a first access mode and with a variable latency in a second access mode; a first access path used in the first access mode; a second access path used in the second access mode; and a first ECC processing part configured to be connected to the first access path and to perform error detection and correction using an ECC on the data output from the nonvolatile memory cell array in the first access mode.</p>
申请公布号 EP2530593(B1) 申请公布日期 2015.01.07
申请号 EP20120169202 申请日期 2012.05.24
申请人 SONY CORPORATION 发明人 NAKANISHI, KENICHI;TSUTSUI, KEIICHI
分类号 G06F11/10 主分类号 G06F11/10
代理机构 代理人
主权项
地址