| 摘要 |
A power semiconductor module comprises at least one power semiconductor component; a connection device which makes contact with the power semiconductor component and includes a layer assembly having at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track; an insulating layer following in the layer assembly; and a second electrically conductive layer following further in the layer assembly and forming at least one second conductor track. A power semiconductor module comprises at least one power semiconductor component; a connection device which makes contact with the power semiconductor component and includes a layer assembly having: at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track; an insulating layer following in the layer assembly; and a second electrically conductive layer following further in the layer assembly and forming at least one second conductor track; where the second layer is remote from the power semiconductor component, and has at least one internal connection element, the internal connection element being embodied as a contact spring having a first and a second contact section and a resilient section between them, the first contact section having a common contact area with a conductor track of the connection device. |
