发明名称 ジルコニア膜の成膜方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for depositing a zirconia film wherein good film quality can be achieved by an aerosolized gas deposition method. <P>SOLUTION: In the method for depositing a high-purity stabilized zirconia film by the aerosolized gas deposition method, wherein zirconia fine particles P produced by the dry method and having an average particle diameter of 0.7 to 11 &mu;m and a specific surface area of 1 to 6.5m<SP>2</SP>/g are contained in a hermetically sealed container 2; an aerosol A of the zirconia fine particles P is deposited by introducing a gas into the hermetically sealed container 2; and the aerosol A of the zirconia fine particles P is conveyed into a film deposition chamber 3, which is maintained at a pressure lower than that of the hermetically sealed container 2, through a conveying pipe 6 that is connected to the hermetically sealed container 2, so that the zirconia fine particles P are deposited on a substrate S that is stored in the film deposition chamber 3. By using zirconia fine particles satisfying the above conditions, a dense zirconia thin film having high adhesion to a substrate can be deposited. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5649026(B2) 申请公布日期 2015.01.07
申请号 JP20090278601 申请日期 2009.12.08
申请人 有限会社 渕田ナノ技研 发明人 渕田 英嗣
分类号 C23C24/04;C03C17/23;C04B35/48;C04B41/87 主分类号 C23C24/04
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