| 摘要 |
PURPOSE: A methods for silicon thin film deposition with energetic beam irradiation are provided to manufacture a polycrystalline silicon thin film under low temperatures in real time by projecting an electronic beam and ion beam on the silicon thin film simultaneously or in time delay. CONSTITUTION: In a method of manufacturing a silicon film using energy beam, a substrate(100) is provided. A silicon film(110) is formed on the surface of the substrate by supplying a silicon source on the surface of the substrate. An electron beam is projected on the surface of the substrate. The projected beam makes the silicon film crystal by supplying energy to a silicon thin film which is deposited. |
