发明名称 スーパールミネッセントダイオード
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of achieving wider bandwidth despite its high output.SOLUTION: A semiconductor light-emitting element 1 comprises a p-type semiconductor layer 20, an n-type semiconductor layer 10, and an active layer 30 which are composed of a gallium-arsenide-based material. The active layer 30 is arranged between the n-type semiconductor layer 10 and the p-type semiconductor layer 20, and includes a multiquantum well structure in which a plurality of well layers 31 to 34 and a plurality of barrier layers 35 to 39 are alternately laminated. Wavelengths of light emitted from the well layers 31 to 34 differ per well layer. A quantum level of each well layer has only a first quantum level.
申请公布号 JP5650707(B2) 申请公布日期 2015.01.07
申请号 JP20120248314 申请日期 2012.11.12
申请人 发明人
分类号 H01L33/06;H01L33/30 主分类号 H01L33/06
代理机构 代理人
主权项
地址