发明名称 |
Magnetic storage element and memory |
摘要 |
A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides. |
申请公布号 |
EP1933338(B1) |
申请公布日期 |
2015.01.07 |
申请号 |
EP20070022152 |
申请日期 |
2007.11.14 |
申请人 |
SONY CORPORATION |
发明人 |
HIGO, YUTAKA;HOSOMI, MASANORI;OHMORI, HIROYUKI;YAMAMOTO, TETSUYA;YAMANE, KAZUTAKA;OISHI, YUKI;KANO, HIROSHI |
分类号 |
H01F10/32 |
主分类号 |
H01F10/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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