发明名称 Via structures and compact three-dimensional filters with the extended low noise out-of-band area
摘要 A filter of the present invention includes a plurality of via structures with a multilayer substrate. Each of the plurality of via structures includes first, second and third functional sections. One end of a signal via of the first functional section is connected to one end of a signal via of the second functional section and another end of the signal via of the second functional section is connected to two signal vias of the third functional section. Those signal vias are surrounded by a plurality of ground vias. Input and output ports of the filter are connected to another end of the signal via of each first functional section.
申请公布号 US9362603(B2) 申请公布日期 2016.06.07
申请号 US201013806824 申请日期 2010.06.30
申请人 NEC CORPORATION 发明人 Kushta Taras
分类号 H01P1/203;H01P1/20;H05K1/02;H05K3/42;H05K3/46 主分类号 H01P1/203
代理机构 McGinn IP Law Group, PLLC. 代理人 McGinn IP Law Group, PLLC.
主权项 1. A filter, comprising: a plurality of via structures; a transmission line configured to connect said plurality of via structures; and a plurality of signal ports configured to input or output signals, wherein each of said plurality of via structures comprises: a multilayer substrate with a plurality of stacked conductor layers and a dielectric isolating each of said plurality of stacked conductor layers;a first functional section disposed at one side of said multilayer substrate;a second functional section connected to said first functional section; anda third functional section connected to said second functional section and disposed at another side of said multilayer substrate opposite to said side of said first functional section, wherein said first functional section comprises: a first pad embedded in a top conductor layer of said plurality of stacked conductor layers;a connection pad embedded in one of said plurality of conductor layers and configured to connect to said second functional section;a first signal via with one end connected to said first pad and another end connected to said connection pad;a first plurality of ground vias surrounding said first signal via;a first plurality of ground plates embedded in said plurality of conductor layers and connected to said first plurality of ground vias; anda first clearance region embedded in said dielectric configured to isolate said first pad, said connection pad and said first signal via from said first plurality of ground vias and said first plurality of ground plates, wherein said second functional section comprises: a connection plate embedded in one of said plurality of conductor layers and configured to connect to said third functional section;a second signal via with one end connected to said connection pad and another end connected to said connection plate;a second plurality of ground vias surrounding said second signal via;a second plurality of ground planes embedded in said plurality of conductor layers and connected to said second plurality of ground vias; anda second clearance region embedded in said dielectric and configured to isolate said connection plate and said second signal via from said second plurality of ground vias and said second plurality of ground planes, wherein said third functional section comprises two blocks which are formed by: two identical third signal vias connected to said connection plate by one end;two identical sets of conductive plates respectively connected to said two identical third signal vias;a third plurality of ground vias surrounding said two identical third signal vias;a third plurality of ground planes connected to said third plurality of ground vias; anda third clearance region embedded in said dielectric and configured to isolate said two identical third signal vias and said two identical sets of conductive plates from said third plurality of ground vias and said third plurality of ground planes, wherein said transmission line is connected to said connection pad of said each via structure, wherein said plurality of signal ports are connected to or embedded in said first pad of each of said plurality of via structures, and wherein the third clearance region isolates said two identical sets of conductive plates from each other.
地址 Tokyo JP