| 摘要 |
<p>A method of manufacturing a non-volatile memory element includes forming a first electrode; forming a variable resistance layer; and forming a second electrode. Forming the variable resistance layer includes forming a third metal oxide layer having a third metal oxide, forming a second metal oxide layer having a second metal oxide, and forming a first metal oxide layer e having a first metal oxide; wherein the variable resistance layer reversibly changes its resistance value in response to an electric signal applied between the first electrode and the second electrode; the first metal oxide is lower in degree of oxygen deficiency than the third metal oxide; the second metal oxide is lower in degree of oxygen deficiency than the third metal oxide; the third metal oxide is an oxygen-deficient metal oxide; and the first metal oxide layer is different in density from the second metal oxide layer.</p> |
