| 摘要 |
<p>A optical-information acquisition element encompasses a semiconductor layer (31) of a p-type, a surface-buried region (33) of a n-type buried in the semiconductor layer (31) so as to implement a photodiode with the semiconductor layer (31), a charge-accumulation region (36) of the n-type buried in the surface-buried region (33), configured to accumulate charges generated by the photodiode, a barrier-creating region of the p-type buried in the surface-buried region (33) so as to sandwich the surface-buried region (33) with the semiconductor layer (31), configured to create a potential barrier, and a charge-exhaust region (34) of the n-type buried in the semiconductor layer (31), configured to store and to extract excess charges which surmount the potential barrier and flow out from the charge-accumulation region (36). The changes of potential level of the charge-accumulation region (36) are extracted as signals, after receiving optical-communication signals. An optical-information-acquisition element array and a hybrid solid-state imaging device are also provided.</p> |
