| 摘要 |
<p>Provided is a field-effect transistor which operates based on single electrons or atoms and which can be operated at a room temperature and can be densely integrated. A thin film (11) is composed of an amorphous alloy or a metal glass. An electrical insulation film (12) is provided on one surface of the thin film (11). A source electrode (13) and a drain electrode (14) are provided on both ends of the thin film (11). A gate electrode (15) is provided on the surface of the film (12). The thin film (11) has a metal polyhedral structure or a metal cluster having a plurality of conductive islands in which nanoscopic or subnanoscopic gaps or tunnels are formed in a two-dimensional plane or a three-dimensional space. The thin film (11) is configured so that hydrogen dissolved in the metal polyhedral structure or the metal cluster forms voids having a capacitance of a nanoscopic or subnanoscopic diameter, and tunneling of protons or electrons occurs via the voids.</p> |
