发明名称 共鳴トンネルダイオードおよびテラヘルツ発振器
摘要 PROBLEM TO BE SOLVED: To enhance the operation frequency of an oscillator by minimizing reduction in speed of electrons passed through a double barrier, when passing through an electron transit layer. SOLUTION: The resonance tunnel diode has a structure where a buffer layer 22, a sub-emitter layer 23, an emitter layer 24, a spacer layer 25, a first barrier layer 26, a well layer 27, a second barrier layer 28, an electron transit layer 29, and a collector layer 30 are laminated sequentially on a substrate 21. The electron transit layer 29 has a structure where the potential on the junction surface to the second barrier layer 28 is lower than the potential of the collector layer 30, approaches the potential of the collector layer 30 as the distance to the collector layer 30 becomes shorter, and the potential on the junction surface to the collector layer 30 is equal to the potential of the collector layer 30. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5648915(B2) 申请公布日期 2015.01.07
申请号 JP20110021439 申请日期 2011.02.03
申请人 发明人
分类号 H01L21/329;H01L29/88;H03B7/08 主分类号 H01L21/329
代理机构 代理人
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