| 摘要 |
A thin film transistor includes at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode are provided on a substrate, with the source electrode and the drain electrode being provided on the active layer. The active layer is configured of an amorphous oxide semiconductor. A first amount of moisture present in the gate insulating film is smaller than a second amount of moisture present in the active layer. |
