METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an SGT (Surrounding Gate Transistor) which reduces parasitic capacitance between gate wiring and a substrate and which directly connects metal wiring and an upper part of a columnar silicon layer without forming a contact on an upper part of the columnar silicon layer, and to provide a structure of the SGT obtained by result of the method.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a fin-shaped silicon layer on a silicon substrate; forming a first insulation film around the fin-shaped silicon layer; forming a columnar silicon layer on an upper part of the fin-shaped silicon layer; forming a gate insulation film formed around the columnar silicon layer, a gate electrode formed around the gate insulation film and gate wiring connected to the gate electrode; forming a first diffusion layer formed on an upper part of the columnar silicon layer and a second diffusion layer on a lower part of the columnar silicon layer and the upper part of the fin-shaped silicon layer; forming a first silicide and a second silicide on the first diffusion layer and the second diffusion layer; depositing an interlayer insulation film; and planarizing the interlayer insulation film.SELECTED DRAWING: Figure 1