Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties

摘要

A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or arrangement of parallel linear trenches. Alternatively, the interconnect surface area of the first conductive pads is expanded by forming a second conductive pad over the first conductive pad. A semiconductor die has a plurality of interconnect structures formed over a surface of the semiconductor die. The semiconductor die is mounted to the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structure to the first conductive pads. A mold underfill material is deposited between the semiconductor die and substrate.

主权项

1. A method of making a semiconductor device, comprising:
providing a substrate; forming a conductive layer over the substrate; forming a first insulating layer over the substrate including forming a first portion of the first insulating layer over the conductive layer; forming a first conductive pad over the first portion of the first insulating layer and the conductive layer to form an interconnect surface area, the first conductive pad including an outer sidewall; expanding the interconnect surface area by removing a first portion of the first conductive pad to form a plurality of recesses in the first conductive pad, a first recess of the plurality of recesses forming a circular ring directly overlying the first portion of the first insulating layer and the conductive layer; and bonding a semiconductor die to the substrate by bonding an interconnect structure of the semiconductor die into the expanded interconnect surface area and contacting the outer sidewall of the first conductive pad.