发明名称 MEMORY CIRCUIT
摘要 A memory circuit includes: a bistable circuit (30) that writes data; nonvolatile elements (MTJ1, MTJ2) that store the data written in the bistable circuit in a nonvolatile manner, and restore the data stored in a nonvolatile manner into the bistable circuit; and a determining unit (50) that does not store the data written in the bistable circuit into the nonvolatile elements when the data in the bistable circuit is the same as the data in the nonvolatile elements, but stores the data in the bistable circuit into the nonvolatile elements when the data in the bistable circuit is not the same as the data in the nonvolatile elements.
申请公布号 KR20150002835(A) 申请公布日期 2015.01.07
申请号 KR20147032134 申请日期 2013.02.19
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY 发明人 YAMAMOTO SHUICHIRO;SHUTO YUSUKE;SUGAHARA SATOSHI
分类号 G11C11/15;G11C11/413 主分类号 G11C11/15
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