| 摘要 |
<p>The present invention relates to a gate driver for a flat panel display device and, more particularly, to a gate driver and a flat panel display device including the same which can mitigate the deterioration of device characteristics caused by using oxide silicon instead of amorphous (a-Si:H) silicon when forming a conventional gate driver. According to an embodiment of the present invention, in a gate driver to which an oxide thin film transistor is applied, at least three QB nodes, which are rapidly deteriorated due to the continuous application of a DC voltage, are provided to reduce positive stress applied to the thin film transistor to at least 1/3 or less compared to the conventional gate driver, thereby extending the life of the gate driver.</p> |
