发明名称 Light-emitting device and manufacturing method thereof
摘要 A light-emitting device which is thin and lightweight and has high flexibility, impact resistance, and reliability is provided. Further, a light-emitting device which is thin and lightweight and has high flexibility, impact resistance, and hermeticity is provided. In the light-emitting device in which a light-emitting region including a transistor and a light-emitting element is sealed between a first flexible substrate and a second flexible substrate, an opening is provided in the second flexible substrate around a region overlapping with the light-emitting region, the opening is filled with frit glass containing low-melting glass and bonding the first flexible substrate and the second flexible substrate, and the frit glass is provided so as to be in contact with an insulating layer provided over the first flexible substrate. The second flexible substrate may include an opening in a region overlapping with the light-emitting region.
申请公布号 US8926389(B2) 申请公布日期 2015.01.06
申请号 US201313888630 申请日期 2013.05.07
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Nishido Yusuke
分类号 H01L51/56;H05B33/04;H01L51/52;H01L51/00 主分类号 H01L51/56
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A method for manufacturing a light-emitting device comprising the steps of: forming a light-emitting region over a first flexible substrate; forming frit glass over a second flexible substrate comprising an opening so that the opening is filled with the frit glass; providing the second flexible substrate over the first flexible substrate so that the opening overlaps with a region that is located around the light-emitting region; and bonding the first flexible substrate and the second flexible substrate by irradiating the frit glass with laser light.
地址 Kanagawa-ken JP