<p>Provided is a light emitting diode comprising: a substrate; a lower buffer layer stacked on the substrate; a first thermally conductive layer stacked on the lower buffer layer and including graphene; an upper buffer layer stacked on the first thermally conductive layer; a first semiconductor lower layer stacked on a partial region of the upper buffer layer; a second thermally conductive layer stacked on the first semiconductor lower layer and including graphene; a first semiconductor upper layer stacked on the second thermally conductive layer; an active layer stacked on a partial region of the first semiconductor upper layer; a second semiconductor layer stacked on the active layer; a first electrode formed on the first semiconductor upper layer which is partially exposed; a second electrode formed on the second semiconductor layer; and a heat-radiating wire connected to a partial region of the upper buffer layer which is partially exposed. The light emitting diode according to the present invention improves dissipation of heat generated during light emitting operation and light efficiency.</p>
申请公布号
KR101479450(B1)
申请公布日期
2015.01.06
申请号
KR20140147765
申请日期
2014.10.28
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YEUNGNAM UNIVERSITY