| 发明名称 | Light-emitting element with multiple light-emitting stacked layers | ||
| 摘要 | A light-emitting device includes a carrier; a first light-emitting element formed on a first portion of the carrier, including: a first MQW structure configured to emit a first light with a first dominant wavelength; a second MQW structure configured to emit a second light with a second dominant wavelength on the first MQW structure; wherein the first MQW structure and the second MQW structure both comprise InxGa1-xP or InxGa1-xAs, wherein 0<x<1; and a second light-emitting element, formed on a second portion on of the carrier, including a light-emitting stacked layer configured to emit a third light with a third dominant wavelength, wherein the third light is blue, wherein a difference between the first dominant wavelength and the second dominant wavelength is 5 nm to 30 nm. | ||
| 申请公布号 | US8927958(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201213683476 | 申请日期 | 2012.11.21 |
| 申请人 | EPISTAR Corporation | 发明人 | Hsieh Min-Hsun;Lin Yi-Chieh;Lee Rong-Ren |
| 分类号 | H01L31/00;H01L27/15;H01L33/00;H01L33/06;H01L33/08 | 主分类号 | H01L31/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A light-emitting device, comprising: a carrier; a first light-emitting element, formed on a first portion of the carrier, comprising: a first MQW structure configured to emit a first light with a first dominant wavelength;a second MQW structure configured to emit a second light with a second dominant wavelength on the first MQW structure; wherein the first MQW structure and the second MQW structure both comprise InxGa1-xP or InxGa1-xAs, wherein 0<x<1; and a second light-emitting element, formed on a second portion of the carrier, comprising a light-emitting stacked layer configured to emit a third light with a third dominant wavelength, wherein the third light is blue, wherein a difference between the first dominant wavelength and the second dominant wavelength is 5 nm to 30 nm. | ||
| 地址 | Hsinchu TW | ||