Interconnects having sealing structures to enable selective metal capping layers

摘要

Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

主权项

1. An apparatus comprising:
an interconnect including a conductive material extending into a dielectric material layer, wherein an oxidizable material is doped into the interconnect; a capping layer to cap a first portion of a surface of the interconnect; and a sealing structure adapted to seal a second portion of the surface including at least one gap of exposed interconnect conductive material between the capping layer and the dielectric layer by oxidizing a portion of the oxidizable material adjacent the at least one gap, wherein the second portion of the surface including at least gap of exposed interconnect conductive material is not capped by the capping layer.