发明名称 |
Method for optical proximity correction |
摘要 |
A smooth process is provided in the present invention. The smooth process is applied to a retarget layout, wherein the retarget layout is dissected into a plurality of segments. Furthermore, the retarget layout comprises a first original pattern, a first adding pattern and a second adding pattern. The smooth process includes changing the second adding pattern to a first smooth pattern. Latter, a second smooth pattern is added to extend from a bottom of the first smooth pattern and a tail portion of the first adding pattern is shrunk to a third smooth pattern. After the smooth process, an optical proximity correction process is applied to the smooth layout to produce an optical proximity correction layout. |
申请公布号 |
US8930858(B1) |
申请公布日期 |
2015.01.06 |
申请号 |
US201314091345 |
申请日期 |
2013.11.27 |
申请人 |
United Microelectronics Corp. |
发明人 |
Kuo Hui-Fang;Chen Ming-Jui |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A method for optical proximity correction, comprising:
obtaining a retarget layout after a retarget process, wherein the retarget layout is dissected into a plurality of segments, and the retarget layout comprises a first original pattern, a first adding pattern and a second adding pattern; using a computer to calculate a distance between adjacent parallel segments, if the distance is greater than a first predetermined value, processing a smooth process to modify the retarget layout to generate a smooth layout, wherein the smooth process comprises the steps of: (a) changing the second adding pattern to a first smooth pattern; and (b) adding a second smooth pattern extending from a bottom of the first smooth pattern and shrinking a tail portion of the first adding pattern to a third smooth pattern, and the tail portion of the first adding pattern connecting to a top of the first smooth pattern; and applying an optical proximity correction process to the smooth layout to produce an optical proximity correction layout. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |