发明名称 Substrate including thin film transistors and organic light emitting display apparatus including the substrate
摘要 A substrate includes a thin film transistor (TFT) which includes an active layer, a gate electrode, a source electrode, and a drain electrode; a first insulating layer disposed between the active layer and the gate electrode; a second insulating layer disposed between the gate electrode and the source and drain electrodes; a third insulating layer disposed on the second insulating layer, and including a first region for opening the second insulating layer and a second region for opening one of the source and drain electrodes, the first region and the second region being integrally connected; and a first electrode connected to one of the source and drain electrodes, and disposed so as to cover the first region and the second region.
申请公布号 US8927997(B2) 申请公布日期 2015.01.06
申请号 US201213539097 申请日期 2012.06.29
申请人 Samsung Display Co., Ltd. 发明人 Lee Won-Kyu;Chang Young-Jin;Jin Seong-Hyun
分类号 H01L27/32;H01L29/786 主分类号 H01L27/32
代理机构 代理人 Bushnell, Esq. Robert E.
主权项 1. A substrate, comprising: a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain electrode; a first insulating layer disposed between the active layer and the gate electrode; a second insulating layer disposed between the gate electrode and the source and drain electrodes; a third insulating layer disposed on the second insulating layer, and including an integrally formed hole which exposes the second insulating layer in a first region and which exposes one of the source and drain electrodes in a second region; and a first electrode connected to one of the source and drain electrodes, disposed to cover the first region and the second region, and directly contacting the second insulating layer exposed by the integrally formed hole in the first region, a portion of the third insulating layer interposed between the first electrode and the second insulating layer.
地址 Giheung-Gu, Yongin, Gyeonggi-Do KR
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