Solar cell and method for fabricating the same

摘要

A solar cell comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode layer, an n-side electrode; and a ZnO transparent electrode layer.;The n-side electrode layer consists of AgxAu1-x, and x represents a value of not less than 0.1 and not more than 0.5. The ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles and each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer. The cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.

主权项

1. A solar cell comprising:
an n-type semiconductor layer; a p-type semiconductor layer; a p-side electrode layer; an n-side electrode; and a ZnO transparent electrode layer; wherein the n-type semiconductor layer is in contact with the p-type semiconductor layer; the p-type semiconductor layer is interposed between the p-side electrode layer and the n-type semiconductor layer; the n-type semiconductor layer is interposed between the n-side electrode layer and the p-type semiconductor layer; the n-side electrode layer covers a part of the upper surface of the n-type semiconductor layer; the n-side electrode layer formed of AgxAu1-x; x represents a value of not less than 0.1 and not more than 0.5; the ZnO transparent electrode layer is formed on the upper surface of the n-side electrode layer; the ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles, each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer; and the cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.