发明名称 |
Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid |
摘要 |
A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c−6y−5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium. |
申请公布号 |
US8927429(B2) |
申请公布日期 |
2015.01.06 |
申请号 |
US201113877759 |
申请日期 |
2011.10.04 |
申请人 |
BASF SE |
发明人 |
Schmitt Christine;Karpov Andrey;Rosowski Frank;Brands Mario;Li Yuzhuo |
分类号 |
H01L21/306;H01L21/321;C09G1/02 |
主分类号 |
H01L21/306 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A chemical-mechanical polishing CMP composition, comprising:
(A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of empirical formula I:
HaXbP3MoyVzOc wherein X is a cation other than H,
8≦y≦188≦z≦1456≦c≦105a+b=2c−6y−5(3+z)b≧0, anda>0, or a salt thereof, and (C) an aqueous medium. |
地址 |
Ludwigshafen DE |