TRANSISTOR AND SEMICONDUCTOR DEVICE

摘要

The present invention provides a transistor for improving a hump effect and a semiconductor device. The transistor includes an active region which includes a first part, a second part, and a third part. The second part faces the third part by interposing the first part. A gate electrode to overlap the first part of the active region is arranged. A gate dielectric element is arranged between the gate electrode and the active region. A drain region is arranged in the second part of the active region. A source region is arranged in the third part of the active region. A channel region is arranged in the first part of the active region. The channel region includes a first channel region with a first channel width, a second channel region with a second channel width which is wider than the first channel width. The second channel region is closer to the drain region than the first channel region.