Graphene barrier layers for interconnects and methods for forming the same

摘要

Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.

主权项

1. A method comprising:
providing a dielectric body having a trench formed in a surface thereof; forming a first layer above the dielectric body within the trench, wherein the first layer comprises amorphous carbon and completely fills at least a portion of the trench; forming a second layer above the first layer, wherein the second layer comprises a metal, and all of the second layer is positioned external to the at least a portion of the trench; and heating the dielectric body, the first layer, and the second layer to convert at least some of the amorphous carbon to graphene, wherein at least some of the graphene is positioned within the at least a portion of the trench,wherein the at least a portion of the trench comprises is a second portion having a second width, the trench further comprising a first portion having a first width, wherein the second width is less than the first width, the first portion of the trench is positioned between the second portion of the trench and the surface of the dielectric body, the first layer completely fills the second portion of the trench before the heating of the dielectric body, the first layer, and the second layer, and after the heating of the dielectric body, the first layer, and the second layer, the second portion of the trench is at least partially opened.