Localized implant into active region for enhanced stress

摘要

Methods for enhancing strain in an integrated circuit are provided. Embodiments of the invention include using a localized implant into an active region prior to a gate etch. In another embodiment, source/drain regions adjacent to the gates are recessed to allow the strain to expand to full potential. New source/drain regions are allowed to grow back to maximize stress in the active region.

主权项

1. A method comprising:
providing a semiconductor substrate including an active semiconductor region and a non-active semiconductor region; depositing a first gate layer on the active semiconductor region and the non-active semiconductor region of the semiconductor substrate; implanting a stress-inducing material into the first gate layer; after said implanting a stress-inducing material, removing the first gate layer over the non-active region of the semiconductor substrate, the first gate layer implanted with the stress-inducing material remaining on the active semiconductor region of the semiconductor substrate; after said removing the first gate layer over the non-active region, depositing a second gate layer on the first gate layer implanted with the stress inducing material; and after depositing the second gate layer on the first gate layer implanted with the stress inducing material, annealing the semiconductor substrate to create stress in the active semiconductor region; and then increasing stress in the active semiconductor region of the semiconductor substrate after the annealing by:
removing source/drain regions of the semiconductor substrate adjacent to the active semiconductor region to a depth of the active semiconductor region; and then,re-growing source/drain regions adjacent to the active semiconductor region.