| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method capable of controlling the etching rate of an SiN film, and capable of ensuring a high selectivity on both of the SiO2 film and Si.SOLUTION: The wafer processing method includes the steps of: supplying a processing gas containing CHF3 or CF4 and O2 gas into a processing chamber in a vacuum vessel; and supplying an RF electric power of 7 to 50 MHz to an induction coil enclosing outer periphery of the processing chamber to thereby perform etching back on the surface of the substrate disposed in the processing chamber as a processing object the SiN film of a film structure which includes an SiO2 film and an SiN film or an Si film and an SiN film by using inductive coupling plasma formed in the processing chamber.SELECTED DRAWING: Figure 1 |
