发明名称 Photoresist coating process
摘要 A photoresist coating process including a first step and a second step is provided. In the first step, a wafer is accelerated by a first average acceleration. In the second step, the wafer is accelerated by a second average acceleration. The first acceleration and the second acceleration are both larger than zero, and photoresist material is provided to the wafer only in the second step.
申请公布号 US8927058(B2) 申请公布日期 2015.01.06
申请号 US200812168297 申请日期 2008.07.07
申请人 United Microelectronics Corp. 发明人 Huang Shou-Wan;Su Kuan-Hua
分类号 B05D3/12;G03F7/16 主分类号 B05D3/12
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A photoresist coating process, comprising: performing a first step to rotate a wafer by a first average acceleration; performing a second step to rotate the wafer by a second average acceleration; and performing a velocity adjustment step to evenly distribute the photoresist material on the wafer, wherein the velocity adjustment step includes repeatedly decelerating the rotation of the wafer and accelerating the rotation of the wafer; wherein the first average acceleration and the second average acceleration are greater than 0; a photoresist material is dispensed to the wafer only during the second step; the second average acceleration of the second step is smaller than the first average acceleration of the first step; and the velocity range of the velocity adjustment step is within the velocity range of the second step.
地址 Science-Based Industrial Park, Hsinchu TW