发明名称 Process for producing fluorescent substance and fluorescent substance produced thereby
摘要 The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a process for producing the fluorescent substance. This fluorescent substance is an oxynitride phosphor having a low paramagnetic defect density and comprising aluminum, silicon, either or both of oxygen and nitrogen, and a metal element M, provided that the metal element M is partly replaced with an emission center element R. That phosphor can be produced by the steps of: subjecting a mixture of starting materials to heat treatment under a nitrogen atmosphere so as to obtain an intermediate fired product, and then further subjecting the intermediate fired product to heat treatment under an atmosphere of nitrogen-hydrogen mixed gas.
申请公布号 US8926863(B2) 申请公布日期 2015.01.06
申请号 US201113216860 申请日期 2011.08.24
申请人 Kabushiki Kaisha Toshiba 发明人 Fukuda Yumi;Matsuda Naotoshi;Hiramatsu Ryosuke
分类号 C09K11/06;C09K11/77;H01L33/50 主分类号 C09K11/06
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. An oxynitride phosphor comprising aluminum, silicon, oxygen, nitrogen, and a metal element M selected from the group consisting of IA group elements, IIA group elements, IIIA group elements other than aluminum, IIIB group elements, rare earth elements and IVA group elements other than silicon, provided that said metal element M is partly replaced with an emission center element R selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; wherein the oxynitride phosphor has a paramagnetic defect density detected at g=2.002 in an electron spin resonance measurement of less than 2×1014 spins/g, wherein the oxynitride phosphor is represented by the following formula (3): (M′1−x3Rx3)Si10−pAl18+pOpN32−p  (3), wherein M′ is an element selected from the group consisting of IIA group metals and rare earth metals; R is the emission center element R and x3 and p are numbers satisfying the conditions of 0<x3≦1 and 0<p≦10, respectively; has an AlN polytypoid structure; and emits luminescence having a peak in a wavelength range of from 400 to 700 nm when excited by electron energy or light in a wavelength range of from 250 to 500 nm.
地址 Tokyo JP