发明名称 Wiring structure, thin film transistor array substrate including the same, and display device
摘要 On a wiring conversion part connected to a first conductive film and a second conductive film each functioning as a wiring, a hollow portion is formed inside the second conductive film. A first transparent conductive film provided on the second conductive film is formed so as to cover an upper surface of the second conductive film and an end surface thereof exposed on the hollow portion, and so as not to cover an outer peripheral end surface of the second conductive film. A second transparent conductive film which is a layer above the first transparent conductive film is connected to the second conductive film and the first conductive film, so that the first conductive film and the second conductive film are electrically connected.
申请公布号 US8928122(B2) 申请公布日期 2015.01.06
申请号 US201213653333 申请日期 2012.10.16
申请人 Mitsubishi Electric Corporation 发明人 Nagano Shingo;Shimamura Takeshi;Hoka Naruhito
分类号 H01L29/40;H01L21/44 主分类号 H01L29/40
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A wiring structure comprising: an upper layer conductive film; a hollow portion formed inside said upper layer conductive film in plan view; and a first transparent conductive film formed so as to cover an upper surface of said upper layer conductive film and an end surface of said upper layer conductive film, exposed on an inner portion of said hollow portion, of said upper layer conductive film, and so as not to cover an outer peripheral end surface of said upper layer conductive film.
地址 Tokyo JP