| 发明名称 | Semiconductor devices and methods of fabricating the same | ||
| 摘要 | A semiconductor device includes a lower insulating pattern on a semiconductor substrate, a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer, a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern, an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening, and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern. | ||
| 申请公布号 | US8928092(B2) | 申请公布日期 | 2015.01.06 |
| 申请号 | US201313940721 | 申请日期 | 2013.07.12 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Han Hauk;Kwon Yong-Il;Oh JungSuk;Ryu Tae sun;Lee Jeonggil |
| 分类号 | H01L27/088;H01L29/788;H01L23/52;H01L21/28;H01L27/115 | 主分类号 | H01L27/088 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A semiconductor device, comprising: a lower insulating pattern on a semiconductor substrate; a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer; a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern; an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening; and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||