Display device, switching circuit and field effect transistor

摘要

A this film transistor is provided. The thin film transistor includes a semiconductor layer including a source region, a drain region, and a channel region, wherein the channel region is provided between the source region and the drain region; and a gate electrode overlapping with the channel region, wherein the channel region includes at least a portion of a channel width that is configured to at least one of continuously decrease and continuously increase in a lengthwise direction.

主权项

1. A thin film transistor comprising:
a semiconductor layer including a source region, a drain region, and at least two channel regions provided between the source region and the drain region; and at least two gate electrodes overlapping with the channel regions, for applying gate voltage to the at least two channel regions, wherein the channel regions include a first portion whose width continuously linearly changes along a lengthwise direction from the source region to the drain region, and a second portion whose width is constant, wherein the first portion and the second portion are linearly connected in a direction from the source region to the drain region, and wherein the semiconductor layer between the at least two channel regions has at least two portions each having a different width.