发明名称 Method of producing β-SiAION, β-SiAION, and products using the same
摘要 A method of producing β-SiAlON includes a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new β-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.
申请公布号 US8926864(B2) 申请公布日期 2015.01.06
申请号 US201113697556 申请日期 2011.04.21
申请人 Denki Kagaku Kogyo Kabushiki Kaisha 发明人 Ichikawa Masayoshi;Emoto Hideyuki
分类号 C09K11/08;C09K11/59;C09K11/64;C09K11/77;C04B35/597;C04B35/626;C04B35/64;H05B33/14;H01L33/50;C01B21/082 主分类号 C09K11/08
代理机构 Stein IP, LLC 代理人 Stein IP, LLC
主权项 1. A method of producing β-SiAlON, comprising a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active elemental compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C., wherein a plurality of boron nitride vessels are placed in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and that sintering is performed in nitrogen atmosphere.
地址 Tokyo JP