发明名称 |
Method of producing β-SiAION, β-SiAION, and products using the same |
摘要 |
A method of producing β-SiAlON includes a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new β-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere. |
申请公布号 |
US8926864(B2) |
申请公布日期 |
2015.01.06 |
申请号 |
US201113697556 |
申请日期 |
2011.04.21 |
申请人 |
Denki Kagaku Kogyo Kabushiki Kaisha |
发明人 |
Ichikawa Masayoshi;Emoto Hideyuki |
分类号 |
C09K11/08;C09K11/59;C09K11/64;C09K11/77;C04B35/597;C04B35/626;C04B35/64;H05B33/14;H01L33/50;C01B21/082 |
主分类号 |
C09K11/08 |
代理机构 |
Stein IP, LLC |
代理人 |
Stein IP, LLC |
主权项 |
1. A method of producing β-SiAlON, comprising a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active elemental compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C., wherein a plurality of boron nitride vessels are placed in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and that sintering is performed in nitrogen atmosphere. |
地址 |
Tokyo JP |