Method of converting between non-volatile memory technologies and system for implementing the method

摘要

A method of designing a charge trapping memory array including designing a floating gate memory array layout. The floating gate memory layout includes a first type of transistors, electrical connections between memory cells of the floating gate memory array layout, a first input/output (I/O) interface, a first type of charge pump, and an I/O block. The method further includes modifying the floating gate memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors. The method further includes determining an operating voltage difference between the I/O block and the second type of transistors. The method further includes modifying the floating gate memory array layout, using the processor, to modify the first charge pump based on the determined operating voltage difference.

主权项

1. A method of forming a memory circuit, the method comprising:
designing a memory array layout, the memory array layout comprises:
a plurality of memory cells,high voltage (HV) transistor circuits for a write operationlow voltage (LV) circuits for logic controlelectrical connections between the plurality of memory cells of the memory array layout,an input/output (I/O) device, andan I/O interface between the plurality of memory cells and the I/O device; determining a type of memory to be produced using the designed memory array layout; selecting a charge storing material from the group consisting of a floating gate material and a charge trapping material, based on the determined type of memory; depositing the selected charge storing material; forming the I/O device; selecting a type of device well based on the determined type of memory; forming the selected type of device well; and maintaining the electrical connections between the plurality of memory cells.