发明名称 Semiconductor packaging for a memory device and a fabricating method thereof
摘要 A semiconductor device includes a substrate, a semiconductor chip, a first molding member and a metal layer. The substrate includes a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate. The semiconductor chip is formed on the first surface of the substrate. The first molding member is formed on the first surface of the substrate and covers the semiconductor chip while not covering the first exposed surface. The metal layer covers the first molding member and extends to lateral surfaces of the substrate while contacting the first exposed surface.
申请公布号 US8928129(B2) 申请公布日期 2015.01.06
申请号 US201213550186 申请日期 2012.07.16
申请人 Samsung Electronics Co., Ltd. 发明人 Song In-Sang
分类号 H01L23/552;H01L23/04;H01L27/08;H01L29/40;H01L21/76;H01L23/00;H01L23/498;H01L25/065 主分类号 H01L23/552
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A semiconductor device, comprising: a substrate including a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate; a semiconductor chip formed on the first surface of the substrate; a first molding member formed on the first surface of the substrate and covering the semiconductor chip while not covering the first exposed surface; and a metal layer covering the first molding member and overlapping lateral surfaces of the substrate while contacting the first exposed surface, wherein the metal layer includes a first metal layer covering the first molding member, a second metal layer connected to the first metal layer and contacting the first exposed surface, and a third metal layer connected to the second metal layer and overlapping the lateral surfaces of the substrate, wherein the first metal layer is disposed parallel to a side of the first molding member, the second metal layer is disposed parallel to the first surface of the substrate and is perpendicularly connected to the first metal layer, and the third metal layer is disposed parallel to the lateral surface of the substrate it overlaps and is perpendicularly connected to the second metal layer, wherein the second metal layer is connected to the first ground pad through the first exposed surface, wherein the substrate includes a pair of first lateral surfaces facing each other in a first direction and a pair of second lateral surfaces facing each other in a second direction perpendicular to the first direction, and a recess region extends along the first lateral surfaces in the direction or along the second lateral surfaces in the second direction, wherein the recess region is not formed at corners where the first lateral surfaces and the second lateral surfaces meet.
地址 Suwon-Si, Gyeonggi-Do KR