发明名称 Method for transferring graphene layer
摘要 The present invention discloses a method for transferring a graphene layer. The graphene layer formed on a metal carrier layer is electrostatically adsorbed on a substrate by electrostatic charges, and then the substrate having the graphene layer formed on the metal carrier layer is immersed in an etching solution to remove the metal carrier layer, thereby completing the transfer of the graphene layer. In addition to being able to provide a simple method for transferring the graphene layer, the present invention further solves a problem of retaining organic residues, thus enhancing electrical properties of the transferred graphene layer.
申请公布号 US8926852(B2) 申请公布日期 2015.01.06
申请号 US201313779043 申请日期 2013.02.27
申请人 National Taiwan University;National Taiwan Normal University 发明人 Chen Chun-wei;Chen Chia-chun;Wang Di-yan;Huang I-sheng
分类号 C23F3/06;B32B38/10;B32B37/00;C01B31/00 主分类号 C23F3/06
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. A method for transferring a graphene layer, the method comprising steps of: providing a substrate; providing a graphene layer, and the graphene layer being formed on a metal carrier layer; providing an electrostatic generating workbench, and disposing the substrate onto the electrostatic generating workbench; applying an electric field to the substrate by the electrostatic generating workbench, so that a surface of the substrate has electrostatic charges; electrostatically adsorbing the graphene layer formed on the metal carrier layer onto the substrate by the electrostatic charges; and immersing the substrate having the graphene layer formed on the metal carrier layer into an etching solution to remove the metal carrier layer, while the graphene layer being retained on the substrate.
地址 Taipei TW