发明名称 |
MACHINING PROCESS OF SEMICONDUCTOR WAFER |
摘要 |
<p>An objective of the present invention is to process high flattening with respect a surface of a semiconductor wafer. A resin application and grinding step is repeatedly carried out, the step including determining as a reference surface a flat surface obtained by applying a curable material to one entire surface of a wafer sliced out from a semiconductor single crystal ingot with the use of a wire saw apparatus and performing surface grinding with respect to the other surface of the wafer, and determining as a reference surface the other surface of the wafer subject to the surface grinding and performing the surface grinding with respect to the one surface of the wafer.</p> |
申请公布号 |
KR20150001611(A) |
申请公布日期 |
2015.01.06 |
申请号 |
KR20140061998 |
申请日期 |
2014.05.23 |
申请人 |
SUMCO CORPORATION |
发明人 |
TANAKA TOSHIYUKI;HASHIMOTO YASUYUKI;HASHII TOMOHIRO |
分类号 |
H01L21/304;H01L21/301;H01L21/67 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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