发明名称 MACHINING PROCESS OF SEMICONDUCTOR WAFER
摘要 <p>An objective of the present invention is to process high flattening with respect a surface of a semiconductor wafer. A resin application and grinding step is repeatedly carried out, the step including determining as a reference surface a flat surface obtained by applying a curable material to one entire surface of a wafer sliced out from a semiconductor single crystal ingot with the use of a wire saw apparatus and performing surface grinding with respect to the other surface of the wafer, and determining as a reference surface the other surface of the wafer subject to the surface grinding and performing the surface grinding with respect to the one surface of the wafer.</p>
申请公布号 KR20150001611(A) 申请公布日期 2015.01.06
申请号 KR20140061998 申请日期 2014.05.23
申请人 SUMCO CORPORATION 发明人 TANAKA TOSHIYUKI;HASHIMOTO YASUYUKI;HASHII TOMOHIRO
分类号 H01L21/304;H01L21/301;H01L21/67 主分类号 H01L21/304
代理机构 代理人
主权项
地址