发明名称 Electronic circuits including a MOSFET and a dual-gate JFET
摘要 Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
申请公布号 US8928410(B2) 申请公布日期 2015.01.06
申请号 US201313803792 申请日期 2013.03.14
申请人 ACCO Semiconductor, Inc. 发明人 Bracale Alexandre G.;Masliah Denis A.
分类号 H03F3/16;H01L27/088;H01L21/82;H01L27/06;H03F1/22;H03F3/195;H03F3/24;H03F1/02;H03F1/56;H03F3/193;H01L27/095;H01L27/098 主分类号 H03F3/16
代理机构 Peters Verny, LLP 代理人 Peters Verny, LLP
主权项 1. An electronic circuit comprising: a substrate; a MOSFET including a source and a drain both defined within the substrate, and a gate disposed on the substrate; and a JFET, distinct from the MOSFET, and including a source, a drain, a top gate, and a bottom gate, each of the source, drain, top gate, and bottom gate being defined within the substrate, the source of the JFET being directly coupled to the drain of the MOSFET.
地址 Sunnyvale CA US